In this paper a content-address memory circuit fullyimplemented using single-electron tunneling devices(SET) is proposed and implemented. The memorycircuit is based on SET flip-flops and a SET winnertake-all neural network. The SET content-addressmemory is validated by simulation and the operatingtemperature range is evaluated. Célia Ghedini Ralha, José Carlos Loureiro Ralha, Charles Antônio Nascimento Costa.
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