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SHORT-CHANNEL EFFECTS IMPROVEMENT BY USING DOUBLE-GATE SOI MOSFET

RobustWeb: Development and Validation of SOA Applications based on Web Services

Sara Dereste dos SantosMichelly de SouzaJoão Antônio Martino

Eliane MartinsAna CavalliJean ArlatRegina MoraesTaisy S. Weber

In this paper a comparison between short-channeleffects in single and double-gate devices is presented.The analysis is carried out through two-dimensionalnumerical simulations, by comparing the thresholdvoltage, subthreshold slope and the DIBL effect in bothstructures, varying the channel length down to 0.25?m.The results show that double-gate devices present bettershort-channel effects behavior than single-gate devices.Technological parameters were varied, showing thatshort-channel effects are reduced with silicon filmthickness reduction. RobustWeb is a cooperation project joining Brazilian and French researchers to develop methods and tools that aim reaching Web Services robustness. The project encompasses seven institutions in both countries. All partners have long experience in the complete life cycle of software engineering, which constitute a solid basis to reach relevant results to face important challenges in the area of service-oriented architecture.

http://www.lbd.dcc.ufmg.br/colecoes/sforum/2007/0024.pdf

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