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INFLUENCE OF THE LDD LENGTH IN SOI MOSFET DEVICES

Blood Vessels Segmentation in Non-Mydriatic Images using Wavelets and Statistical Classifiers

Jorge J. G. LeandroJoão V. B. SoaresRoberto M. Cesar Jr.Herbert F. Jelinek

Katia Regina Akemi SasakiTalitha NicolettiJoão Antonio Martino

In this paper the influence of the LDD (Lightly DopedDrain) length in a planar SOI LDDMOSFET (Silicon-on-Insulator Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistor) structure isverified through bidimensional numerical simulations. Itwas observed that the series resistance (RSD) increaseslinearly with the increase of the LDD length except fordevices without the use of LDD, which presented smallervalues of RSD than the trend. It was noted that thisinfluence is more evident in shorter devices.Another behavior analyzed was its influence on theSCE (short channel effects). The devices with the LDDregion began to suffer from the SCE for smaller channellengths.Finally, a range of LDD lengths that minimizes theSCE and the series resistance was obtained.

http://www.lbd.dcc.ufmg.br/colecoes/sforum/2010/005.pdf

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