R. L. Oliveira Pinto,  Márcio Cherem Schneider,  Carlos Galup-Montoro. 

This paper presents a design procedure for MOS amplifiers based on a universal model of the MOSFET, valid from weak to strong inversion. A set of very simple expressions allows quick design by hand as well as an evaluation of the design in terms of power consumption and silicon real estate. It is shown that in most cases there is an optimum bias in moderate inversion for which the attainable DC gain is maximum. The design and measurements on a common-source amplifier illustrate the appropriateness of the proposed methodology.

http://csdl.computer.org/dl/proceedings/sbcci/1999/0387/00/03870056.pdf

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