Advanced Compact Model for the Charges and Capacitances of Short-Channel MOS Transistors

Oscar da Costa Gouveia-FilhoMárcio Cherem SchneiderCarlos Galup-Montoro

This paper presents a new compact model for the intrinsic charges and (trans)capacitances of the MOSFET including short-channel effects such as drain induced barrier lowering (DIBL), channel length modulation (CLM) and carrier velocity saturation. Explicit and compact expressions for charges and (trans)capacitances valid in all regimes of operation are presented. Simulations examples that illustrate short-channel effects in charges and (trans)capacitances are shown.

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