A Comparative Analysis of Two Strategies to Compute BTI Degradation in CMOS Logic Gates

Lessons Learned on Requirements Elicitation of Health Care Software Systems

Samuel ToledoCristina MeinhardtPaulo Butzen

The aging effects are becoming a critical concern in nanometer designs. Bias Temperature Instability (BTI) is one of aging mechanism and causes a shift in transistor threshold voltage (Vth), and consequently degradation in circuit performance. Several techniques are presented in the literature to deal with this effect. Usually, two different solutions are explored to compute the Vth shift. This paper present a comparison between these two approaches used to compute the device degradation caused by aging effects. The results show that the time under degradation has significant difference, but the BTI behavior reduces this difference in Vth and gate delay.

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Biblioteca Digital Brasileira de Computação - Contato:
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