BDBComp - Biblioteca Digital Brasileira de Computação

XVII Symposium on Microelectronics Technology and Devices - 2002 - Porto Alegre, RS, Brasil

54 registros retornados

Edval J. P. Santos. Simulation of the DC conductance of ballistic quantum devices. Buscar na Web Processando consulta.
Paulo César Miranda Machado. Two-dimensional simulation of Algaas/Ingaas/Gaas Phemts. Buscar na Web Processando consulta.
F. Martinazzo, A. Konzen, J. D. Togni, A. I. Reis, R. P. Ribas. Etching simulator for bulk micromachining in Java platform. Buscar na Web Processando consulta.
Fabiano Fruett. Simulation of the mechanical-stress effect in bipolar junction transistors. Buscar na Web Processando consulta.
H. G. Jimenez, S. N. M. Muñoz, M. A. Pavanello, I. F. Silva, J. A. Diniz, M. B. Zakia, I. Doi, J. W. Swart. Development of CMOS-APS technology. Buscar na Web Processando consulta.
H. Mahfoz-Kotb, A. C. Salaün, T. Mohammed-Brahim, F. Le Bihan, O. Bonnaud. Polycrystalline thin film transistors as multipurpose ambience sensors. Buscar na Web Processando consulta.
A. Poyai, E. Simoen, C. Claeys, R. Rooyackers, A. Redolfi. Impact of thermal budget on junction leakage in a 0.18 and 0.13 um CMOS technology. Buscar na Web Processando consulta.
M. A. Pavanello, J. A. Martino, A. Mercha, J. M. Rafi, E. Simoen, C. Claeys, H. van Meer, K. de Meyer. Comparison between 0.13 mm partially-depleted silicon-on-insulator technology with floating body operation at 300k and 90k. Buscar na Web Processando consulta.
Victor Sonnenberg, João Antonio Martino. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. Buscar na Web Processando consulta.
Marcello Bellodi, João Antonio Martino. The leakage current composition in thin film SOI nMOSFETs at high temperatures. Buscar na Web Processando consulta.
M. A. Pavanello, J. A. Martino, D. Flandre. Analog performance of graded-channel SOI nMOSFETs at low temperatures. Buscar na Web Processando consulta.
Aparecido S. Nicolett, João A. Martino, Eddy Simoen, Cor Claeys. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. Buscar na Web Processando consulta.
Marcelo Antonio Pavanello, Benjamím Iñíguez, João Antonio Martino, Denis Flandre. A physically-based continuous model for graded-channel SOI MOSFET. Buscar na Web Processando consulta.
S. P. Gimenez, M. A. Pavanello, J. A. Martino. A simple analytical modelof graded-channel SOInMOSFET transconductance. Buscar na Web Processando consulta.
Marcelo Bento Pisani, Patrick Verdonck. Characterization of SF6 plasmas by RF electrical measurements. Buscar na Web Processando consulta.
S. A. Moshkalyov, C. Reyes-Betanzo, J. W. Swart. Study of power balance in asymmetric capacitively coupled discharge plasmas used for material processing. Buscar na Web Processando consulta.
Carlos Eduardo Viana, João Luiz dos Reis Santos, Nilton Itiro Morimoto. High density-PECVD silicon oxide deposition by teos and oxygen at low temperature (375C). Buscar na Web Processando consulta.
Ronaldo Willian Reis, Sebastião Gomes dos Santos Filho. Formation of nickel monosilicide onto (100) silicon wafer surfaces. Buscar na Web Processando consulta.
Regis E. Santos, Ioshiaki Doi, José Diniz, Jacobus W. Swart, Sebastião G. dos Santos. Formation and characterization of the NI(PT)SI and NISI for MOS devices applications. Buscar na Web Processando consulta.
Luiz C. D. Gonçalves, Ana N. R. da Silva, Celso F. Alfano, Nilton I. Morimoto, Josemir C. Santos. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structure and sensors. Buscar na Web Processando consulta.
Giuseppe A. Cirinoa, Antonio C. Arruda, Ronaldo D. Mansano, Patrick Verdonck, Luiz G Neto. Fabrication of PMMA microlenses using a micromachined silicon mould. Buscar na Web Processando consulta.
Acácio L Siarkowski, Douglas A. P. Bulla, I. Morimoto. Implementation of an optical integrated pressure sensor and experimental results. Buscar na Web Processando consulta.
Roberto R. Neli, Ioshiaki Doi, José A. Diniz, Jacobus W. Swart. Wet anisotropic etching characterization of crystalline silicon for suspended micro-mechanical structure manufacture. Buscar na Web Processando consulta.
Michel O. S. Dantas, Elisabete Galeazzo, Henrique E. M. Peres, Francisco Javier R. Fernandez. Porous silicon sacrificial layers applied on micromechanical structures fabrication. Buscar na Web Processando consulta.
JFernnández Morales F, Duarte J. E, Samitier J.. Micro-belt conveyor of latex microspheres. Buscar na Web Processando consulta.
Mario Gongora Rubio, Marcelo Bariatto A Fontes, Eliphas Wagner Simões, Jorge Santiago-Avilés. LTCC hybrid technology applied to water quality meso analytical system. Buscar na Web Processando consulta.
Marcelo Bariatto A. Fontes, Idagene A. Cestari. Catheter for intracavitary cardiac potential detection. Buscar na Web Processando consulta.
E. J. P. Santos, A. A. Barybin. Large signal dynamic admittance of PN-junctions. Buscar na Web Processando consulta.
E. W. Simões, I. R. L. García, R. Furlan, J. J. Santiago-Avilés, M. T. Pereira. Numerical modeling of a process for definiton of features in low temperature co-fired ceramics. Buscar na Web Processando consulta.
M. Cid, N. Stem. High-efficiency emitter solar cells and their applicability in industrial process. Buscar na Web Processando consulta.
L. H. C Ferreira, R. L. Moreno, T. C. Pimenta, C. A. Reis Filho. A sample-and-hold circuit topology with offset voltage and self correction for precise applications in CMOS. Buscar na Web Processando consulta.
J. E. Duarte, F. H. Fernández, M. Moreno. Characterization of microactuators by laser. Buscar na Web Processando consulta.
A. M. Barbosa, E. J. P. Santos. Compact SPICE macromodel for saw based smart sensor design. Buscar na Web Processando consulta.
H. P. Araújo, S. G. Santos Filho. Polarization-difference imaging technique for material characterization: algorithm and some applications. Buscar na Web Processando consulta.
S. A. Moshkalyov, C. Reyes-Betanzo, J. W. Swart. Deep anisotropic etching of silicon with smooth surface for micromachining applications. Buscar na Web Processando consulta.
J. C. Tinoco, M. Estrada. Very low plasma oxidation rate for high quality ultrathin SIO2 layers. Buscar na Web Processando consulta.
L. Reséndiz, M. Estrada, A. Cerdeira, A. Ortiz-Conde, F. J. García Sánhez. New procedure for the extraction A-SI:H model sub-threshold parameters. Buscar na Web Processando consulta.
A. R. Navia, S. G. Santos Filho. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. Buscar na Web Processando consulta.
R. J. Rodrigue, R. Furlan. Development of a time-of-flight flow microsensor. Buscar na Web Processando consulta.
W. A. Nogueira, L. Z. Toquetti, S. G. Santos Filho. Diluted HNO3/HF as a final pre-oxidation cleaning step for MOS devices. Buscar na Web Processando consulta.
M. Galeti, M. A. Pavanello, J. A. Martino. Behavior of graded-channel fully depleted SOI nMOSFET at high temperatures. Buscar na Web Processando consulta.
J. C. González, M. I. N. Silva, L. Kuhn, D. Griffis, P. E. Russell. Nano-mechanical properties of silk low-k dielectric material. Buscar na Web Processando consulta.
F. S. Silva, M. M. Oka. Effect of stencil alignment on the solder beading in SMT process. Buscar na Web Processando consulta.
P. R. Barbaroto, I. Doi, L. O. S. Ferreira. A novel silicon-metal process for MEMS. Buscar na Web Processando consulta.
M. A. Pereira, J. A. Diniz, I. Doi, J. W. Swart. Locos isolation made by silicon nitride ECR plasma deposition at room temperature. Buscar na Web Processando consulta.
A. R. Oliveira, M. N. P. Carreño. Phosphorus implantation on near stoichiometric A-SIC:H films. Buscar na Web Processando consulta.
E. S. Ferreira, N. I. Morimoto, R. T. Carvalho. Semiconductor light emitting diodes: an empirical study for uses in fiber optic gyroscopes. Buscar na Web Processando consulta.
M. N. P. Carreño, A. T. Lopes, M. I. Alayo, I. Pereyra. 3D topography in self-sustained membranes of sioxny obtained by PECVD technique at low temperatures. Buscar na Web Processando consulta.
J. C. Gonzalez, M. I. N. Silva, D. P. Griffis, T. T. Miau, P. E. Russell. Improvements in focused ion beam micro-machining of interconnect materials. Buscar na Web Processando consulta.
A. M. Nardes, E. A. T. Dirani, A. M. Andrade, F. J. Fonseca. Highly conductive n-type _C-SI:H films deposited at very low temperature. Buscar na Web Processando consulta.
P. T. Hoashi, J. A. Martino. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. Buscar na Web Processando consulta.
A. S. Nicolett, J. A. Martino, E. Simoen, C. Claeys. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300k and 77k. Buscar na Web Processando consulta.
J. P. Oliveira, N. Oki. A programmable analog Gaussian function synthesizer. Buscar na Web Processando consulta.
J. Guimarães, H. C. Carmo, J. C. Costa. Basic subcircuits with single-electron tunneling devices. Buscar na Web Processando consulta.