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4 registros retornados

• M. A. Pavanello,  J. A. Martino,  E. Simoen,  C. Claeys.  Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETs at low temperatures.  XIX Symposium on Microelectronics Technology and Devices. Buscar na Web Processando consulta.

• M. A. Pavanello,  J. A. Martino,  A. Mercha,  J. M. Rafi,  E. Simoen,  C. Claeys,  H. van Meer,  K. de Meyer.  Comparison between 0.13 mm partially-depleted silicon-on-insulator technology with floating body operation at 300k and 90k.  XVII Symposium on Microelectronics Technology and Devices. Buscar na Web Processando consulta.
• A. Poyai,  E. Simoen,  C. Claeys,  R. Rooyackers,  A. Redolfi.  Impact of thermal budget on junction leakage in a 0.18 and 0.13 um CMOS technology.  XVII Symposium on Microelectronics Technology and Devices. Buscar na Web Processando consulta.
• A. S. Nicolett,  J. A. Martino,  E. Simoen,  C. Claeys.  Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300k and 77k.  XVII Symposium on Microelectronics Technology and Devices. Buscar na Web Processando consulta.